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| BUZ 103AL SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level * dv/dt rated * Low on-resistance * 175 C operating temperature * also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 103AL VDS 50 V ID 35 A RDS(on) 0.05 Package TO-220 AB Ordering Code C67078-S1357-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 35 Unit A ID IDpuls 140 TC = 29 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 100 dv/dt 6 mJ ID = 35 A, VDD = 25 V, RGS = 25 L = 81 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 35 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot 14 20 V W TC = 25 C 120 Semiconductor Group 1 07/96 BUZ 103AL Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 1.25 75 E 55 / 175 / 56 K/W Unit C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.035 2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA A nA 0.05 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 5 V, ID = 17.5 A Semiconductor Group 2 07/96 BUZ 103AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 22 1100 330 140 - S pF 1500 500 210 ns 35 55 VDS 2 * ID * RDS(on)max, ID = 17.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 130 200 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 210 280 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 120 160 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 103AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 55 90 35 140 V 1.8 nS nC Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 70 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 103AL Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 36 A 130 W 110 Ptot 100 90 80 70 60 50 ID 28 24 20 16 12 40 30 20 4 10 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 8 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID 10 2 t = 15.0s p ZthJC 10 0 /ID = VD S 100 s RD ) on S( 1 ms 10 -1 D = 0.50 0.20 10 1 10 ms 0.10 10 -2 0.05 0.02 DC single pulse 0.01 10 0 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 103AL Typ. output characteristics ID = (VDS) parameter: tp = 80 s 80 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 17.5 A, VGS = 5 V 0.14 Ptot = 120W l kj i hV GS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 0.12 A ID 60 g RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 c d 50 f e f 40 e g h i 98% 30 d j k l typ 20 c 10 0 0.0 b a 0.02 0.01 0.00 -60 1.0 2.0 3.0 4.0 V 6.0 VDS -20 20 60 100 C 180 Tj Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 55 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 35 S ID 45 40 35 gfs 25 20 30 25 20 10 15 10 5 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS 0 5 10 15 20 25 30 35 A ID 45 5 15 Semiconductor Group 6 07/96 BUZ 103AL Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.16 a b c d e f Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 0.12 VGS(th) 3.6 3.2 0.10 2.8 2.4 0.08 98% 2.0 0.06 1.6 g typ 2% h j 0.04 i 1.2 0.8 0.4 0.02 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 0.00 0 10 20 30 40 50 60 A 75 0.0 -60 -20 20 60 100 C 180 ID Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 A C pF IF 10 2 10 3 Ciss 10 1 Tj = 25 C typ Coss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 Crss 5 10 15 20 25 30 V 40 VDS 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 103AL Avalanche energy EAS = (Tj ) parameter: ID = 35 A, VDD = 25 V RGS = 25 , L = 81 H 110 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 52 A 16 V EAS 90 VGS 80 70 60 12 10 8 50 40 30 4 20 10 0 20 40 60 80 100 120 140 C 180 2 0 6 0,2 VDS max 0,8 VDS max Tj 0 10 20 30 40 50 nC 65 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 103AL Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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